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Pulsed PECVD growth of silicon nanowires on various substrates

Parlevliet, D. and Cornish, J.C.L. (2007) Pulsed PECVD growth of silicon nanowires on various substrates. MRS Proceedings, 1058 . 1058-JJ03.

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Silicon nanowires with high aspect ratio were grown using PPECVD and a gold catalyst on a variety of different substrates. The morphology of the nanowires was investigated for a range of crystalline silicon, glass, metal, ITO coated and amorphous silicon coated glass substrates. Deposition of the nanowires was carried out in a parallel plate PECVD chamber modified for PPECVD using a 1kHz square wave to modulate the 13.56MHz RF signal. Samples were analyzed using either a Phillips XL20 SEM of a ZEISS 1555 VP FESEM. The average diameter of the nanowires was found to be independent of the substrate used. The silicon nanowires would grow on all of the substrates tested, however the density varied greatly. It was found that nanowires grew with higher density on the ITO coated glass substrates rather than the uncoated glass substrates. Aligned nanowire growth was observed on polished copper substrates. Of all the substrates trialed, ITO coated aluminosilicate glass proved to be the most effective substrate for the growth of silicon nanowires.

Item Type: Journal Article
Murdoch Affiliation(s): School of Engineering and Energy
Publisher: Cambridge University Press
Copyright: © Materials Research Society 2008
Notes: Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration (Fall Meeting 2007)
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