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A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate

Bashkany, Z.A., Abbas, I.K., Mahdi, M.A., Al-Taay, H.F. and Jennings, P. (2018) A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate. Silicon, 10 (2). pp. 403-411.

Link to Published Version: http://dx.doi.org/10.1007/s12633-016-9462-4
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Abstract

A photosensor was fabricated based on a lead sulfide (PbS)/porous silicon (Ps) heterojunction. An n-type Si(100) single crystal wafer was used to prepare the Ps using a photo-electrochemical etching method. A PbS nanocrystalline thin film was deposited onto the Ps substrate using a microwave-assisted chemical bath deposition (MA-CBD) technique. The current-voltage (I-V) characteristics of the fabricated PbS/Ps photosensor were studied under dark, 10 mW/cm2, 20 mW/cm2, and 40 mW/cm2 illumination by light. The device shows good response to light even without a bias voltage and the sensitivity when the applied voltage is 0 V decreased from 5.66 × 104 % under 10 mW/cm2 to 1.8 × 103 % when the device is illuminated by 40 mW/cm2 intensity light. The fabricated PbS/Ps photdetector shows a faster response to light of 0.43 sec when the applied voltage and intensity of light were 1.0 V and 40 mW/cm2, respectively. Moreover, the fastest fall time was 0.4 sec obtained for the device that was exposed to 40 mW/cm2 light and biased by 0.75 V.

Item Type: Journal Article
Murdoch Affiliation(s): School of Engineering and Information Technology
Publisher: Springer
Copyright: © 2016 Springer Science+Business Media Dordrecht
URI: http://researchrepository.murdoch.edu.au/id/eprint/34620
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