Dopant ion implantation simulations in 4H-Silicon Carbide

Phelps, G.J. (2004) Dopant ion implantation simulations in 4H-Silicon Carbide. Modelling and Simulation in Materials Science and Engineering, 12 (6). pp. 1139-1146.

Abstract

Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped device structures. In some cases, implanted structures are used as an adjunct to standard commercial processes of thermal diffusion. The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology. Predicting the profile of ion implanted structures is a key factor in the design topology of any implanted semiconductor device. The prediction of an ion implanted device topology can be performed using a variety of computer simulation tools. Results of typical ion implantation regimes using specific computer simulation tools are reviewed in this paper. The results from these implant profile simulation tools may be used as input data to further device simulation modelling. Predictive models for the effects of post-implantation processing, such as high temperature annealing, are also discussed in this paper.

Item Type:	Journal Article
Publisher:	IOP Publishing Ltd
URI:	http://researchrepository.murdoch.edu.au/id/eprint/32743

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