Murdoch University Research Repository

Welcome to the Murdoch University Research Repository

The Murdoch University Research Repository is an open access digital collection of research
created by Murdoch University staff, researchers and postgraduate students.

Learn more

Understanding the charge carrier conduction mechanisms of plasma-polymerized 2-furaldehyde thin films via DC electrical studies

Kabir, H., Bhuiyan, A.H. and Rahman, M.M.ORCID: 0000-0002-6778-7931 (2016) Understanding the charge carrier conduction mechanisms of plasma-polymerized 2-furaldehyde thin films via DC electrical studies. Thin Solid Films, 609 . pp. 35-41.

[img]
Preview
PDF - Authors' Version
Download (606kB) | Preview
Link to Published Version: http://dx.doi.org/10.1016/j.tsf.2016.04.033
*Subscription may be required

Abstract

Monomer 2-furaldehyde (FDH) was deposited onto the glass substrates in optimum conditions via a glow discharge using a capacitively coupled parallel plate reactor to obtain plasma polymerized 2-furaldehyde (PPFDH) thin films of different thicknesses. In order to realize the carrier conduction mechanisms, the direct current density against applied voltage (J-V) characteristics of these films with different thicknesses were investigated at different temperatures (T) in the voltage region from 0.5 to 49 V in Al/PPFDH/Al sandwich configuration. The J-V characteristics at various temperatures follow a power law of the form J ∞ Vn. In the low voltage region the values of n were recorded to be 0.80 ≤ n ≤ 1.12 and those in the high voltage region found to lie between 1.91 ≤ n ≤ 2.58, demonstrating the Ohmic conduction mechanism in the low voltage region and non-Ohmic conduction in the high voltage region. Theoretically calculated and experimental results of Schottky (βs) and Poole-Frenkel (βPF) coefficients display that the most probable conduction mechanism in PPFDH thin films is the Schottky type. Arrhenius plots of J vs. 1/T for an applied voltage of 5 V, the activation energies were 0.13 ± 0.02 and 0.50 ± 0.05 eV in the low and high temperature regions, respectively. However, for an applied voltage of 35 V, the activation energy values were found to be 0.11 ± 0.01 eV and 0.55 ± 0.02 eV, respectively in low and high temperature regions.

Item Type: Journal Article
Murdoch Affiliation(s): School of Engineering and Information Technology
Publisher: Elsevier BV
Copyright: © 2016 Elsevier B.V.
URI: http://researchrepository.murdoch.edu.au/id/eprint/30983
Item Control Page Item Control Page

Downloads

Downloads per month over past year