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Bonding in doped gallium nanoclusters: Insights from regional DFT

Henry, D.J.ORCID: 0000-0002-9629-4423, Ichikawa, K., Nozaki, H. and Tachibana, A. (2016) Bonding in doped gallium nanoclusters: Insights from regional DFT. Computational Materials Science, 115 . pp. 145-153.

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The molecular nature (Ga2)n of gallium makes this an interesting metal to investigate for the development of novel nano-materials. However, establishment of a targeted approach to manipulating the properties of gallium clusters requires a detailed understanding of how doping affects the bonding in these species. In this study, the bonding of gallium nanoclusters has been investigated using electron deformation densities and Regional Density Functional Theory (RDFT). Bonding throughout Ga12X clusters is generally intermediate between covalent and metallic. However, the presence of Ga2 subunits is clearly identified in clusters with endohedral dopants (Ga12X, X = Al, Si, P, Ga, Ge, As). Although there is evidence of Ga2 subunits in exohedral doped clusters, localised bonding to the dopant generally leads to significant disruption to the cluster framework. Maps of electronic chemical potential provide understanding for the observed differences in regioselectivity for hydrogen adsorption.

Item Type: Journal Article
Murdoch Affiliation(s): School of Engineering and Information Technology
Publisher: Elsevier
Copyright: © 2016 Elsevier B.V.
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