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Annealing effects on hydrogen, oxygen and nitrogen bonding in sputtered a-Si network

Talukder, G., Cornish, J.C.L., Jennings, P. and Hefter, G.T. (1993) Annealing effects on hydrogen, oxygen and nitrogen bonding in sputtered a-Si network. Thin Solid Films, 223 (1). pp. 167-172.

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Fourier transform infrared (FTIR) spectroscpy has been used to study the nature of the bonding of silicon with hydrogen, oxygen and nitrogen in a-Si networks. The samples of varying hydrogen content were prepared by reactive sputtering under different deposition conditions. The effects of annealing were studied on a-Si:H samples contaminated with trace amounts of oxygen and nitrogen. The FTIR spectra were deconvoluted into their component ppeaks using the simplex algorithm. The results demonstrate that evolution of hydrogen starts at not, vert, similar200°C and various silicon-hydrogen moities residing on/near the surface and in the bulk disrupt at different temperatures. The oxygen and nitrogen related groups in the a-Si network change configurations due to annealing.

Item Type: Journal Article
Murdoch Affiliation(s): School of Mathematical and Physical Sciences
Publisher: Elsevier BV
Copyright: (c) Elsevier
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