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Infrared study of as-deposited sputtered hydrogenated amorphous silicon films

Talukder, G., Sobhan, M.A., Hashem, A., Talukder, M.R., Cornish, J.C.L., Jennings, P., Hefter, G.T. and Clare, B.W. (1997) Infrared study of as-deposited sputtered hydrogenated amorphous silicon films. Indian Journal of Pure and Applied Physics, 35 (9). pp. 568-573.


Through infrared absorption spectroscopy, a series of reactively sputtered a-Si:H films containing no detectable impurities have been investigated. A quantitative analysis of the infrared spectra of the as-deposited samples reveals that the modes at 845, 890 and 2090 cm -1 arise from the same SiH group(s). The SiH bending band for the (Si=H 2) n group contributes solely or proportionately more to the 845 cm -1 mode. The results dependent on thickness indicate that the concentrations of hydrogen and oxygen on or near the surface are higher than those in the bulk, whereas the nitrogen concentration is uniform throughout the film thickness.

Item Type: Journal Article
Murdoch Affiliation(s): School of Chemical and Mathematical Science
Publisher: National Institute of Science Communication and Information Resources (NISCAIR)
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