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Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Jennings, P., Jiang, Z-T, Wyatt, N.M.W., Parlevliet, D., Creagh, C., Yin, C-Y, Widjaja, H. and Mondinos, N. (2013) Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates. Applied Physics A, 113 . pp. 723-728.

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Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO x ) and fully oxidized (SiO2) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO2. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.

Item Type: Journal Article
Murdoch Affiliation(s): School of Chemical and Mathematical Science
School of Engineering and Energy
Publisher: Springer Verlag
Copyright: © Springer-Verlag Berlin Heidelberg 2013
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