Murdoch University Research Repository

Welcome to the Murdoch University Research Repository

The Murdoch University Research Repository is an open access digital collection of research
created by Murdoch University staff, researchers and postgraduate students.

Learn more

Noble gas ion effects on the XPS valence band spectra of silicon

Walker, E.ORCID: 0000-0003-2762-2961, Lund, C.P., Jennings, P., Cornish, J.C.L., Klauber, C. and Hefter, G. (2004) Noble gas ion effects on the XPS valence band spectra of silicon. Applied Surface Science, 222 (1-4). pp. 13-16.

Link to Published Version:
*Subscription may be required


X-ray photoelectron spectroscopy (XPS) has been used to study crystalline silicon (c-Si) (100) surfaces bombarded with argon, xenon and neon to examine the interaction of core peaks from these noble gases with the valence band region of silicon. XPS valence band spectra of xenon- and argon-bombarded silicon were found to have prominent peaks at binding energies of approximately 6eV for the xenon (5p1/2, 5p3/2) and 9.3eV for the argon (3p) core levels, respectively. These core level peaks are within the silicon valence band energy range. Attempts to compensate for the interfering peaks are reported but it is concluded that it is better to select a bombarding ion whose core levels do not overlap with the silicon valence band. Results for the ion bombardment are reported for neon, which has a peak at approximately 15.5eV that does not significantly interfere with the photoelectron valence band spectrum of silicon.

Item Type: Journal Article
Murdoch Affiliation(s): Division of Science and Engineering
Publisher: Elsevier BV
Copyright: © 2003 Elsevier B.V. All rights reserved.
Item Control Page Item Control Page