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Optoelectronic properties of spin coated titanium doped indium tin oxide thin films

Taha, H., Henry, D., Rahman, M.M. and Jiang, Z-T (2016) Optoelectronic properties of spin coated titanium doped indium tin oxide thin films. In: Australian Institute of Physics (AIP) WA 2016 Postgraduate Conference, 13 October 2016, University of Western Australia, Perth


Among various transparent conductive materials, indium tin oxide (ITO) demonstrates a major dominant role due to its high optical transparency and high electrical conductivity. Doping ITO with a transition metal, such as Ti, Mo, Zr, Cu, can improve the optoelectronic properties of such coatings. In this study, titanium- doped ITO (Ti:ITO) thin film coatings were developed via a low cost and simple sol-gel spin coating technique. The effect of Ti concentration and annealing temperature on the structural, morphological, optical and electrical properties of the synthesized films (350nm thickness) were characterised by FESME, XRD and UV-Vis techniques. XRD analysis confirmed the cubic bixbyite structure of polycrystalline indium oxide phase. The crystallinity, optical transparency and electric conductivity of the thin film coatings were improved with increase of annealing temperature. At 500°C annealing temperature the grain sizes, verified by FESEM, of the thin films were 79 and 65 nm for doping concentration of 4 at% and 2 at% Ti, respectively. Furthermore, at this temperature, optimum electrical resistivity (1.6x 10-4 and optical transmittance (92%) were achieved. These results compare favourably with the resistivity (2.9x 1 o-4 and transparency around (90%) founded by Liu and Paeng et. al respectively [1, 2].

Publication Type: Conference Paper
Murdoch Affiliation: School of Engineering and Information Technology
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