Infrared study of sputtered hydrogenated amorphous silicon films with unintentionally incorporated oxygen and nitrogen
Talukder, G., Sobhan, M.A., Hashem, A., Talukder, M.R., Cornish, J.C.L., Jennings, P., Hefter, G.T. and Clare, B.W. (1997) Infrared study of sputtered hydrogenated amorphous silicon films with unintentionally incorporated oxygen and nitrogen. Indian Journal of Pure and Applied Physics, 35 (9). pp. 574-578.
Reactively sputtered hydrogenated amorphous silicon films with significant amount of unintentionally incorporated oxygen and nitrogen have been studied through quantitative analysis of infrared absorption spectra. The results indicate that the incorporation of oxygen and nitrogen atoms enhance the integrated strengths of 845 and 2090 cm -1 modes respectively. Further the peak position of the 1020 cm -1 mode moves linearly towards higher wave numbers with increasing number of bridging oxygen atoms attached to six bonding positions of the two silicon atoms of the Si-O-Si group.
|Publication Type:||Journal Article|
|Murdoch Affiliation:||School of Chemical and Mathematical Science|
|Publisher:||National Institute of Science Communication and Information Resources (NISCAIR)|
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