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Pulsed PECVD for the growth of silicon nanowires

Parlevliet, D. and Cornish, J. (2006) Pulsed PECVD for the growth of silicon nanowires. In: International Conference on Nanoscience and Nanotechnology ICONN '06, 3 - 7 July, Brisbane, Queensland

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    Link to Published Version: http://dx.doi.org/10.1109/ICONN.2006.340543
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    Abstract

    Silicon nanowires of high density and high aspect ratio similar to those shown in the literature (Niu et al., 2004, Hofman et al., 2003) have been grown using a variation of plasma enhanced chemical vapour deposition (PECVD) known as pulsed plasma enhanced chemical vapour deposition (PPECVD) using a range of different modulation frequencies. For the range of frequencies used it was found that the presence of modulated silane plasma increases the average density and sample coverage of silicon nanowires. Both of these effects are proposed as being due to the increase in the number of times the plasma is struck and turned off during the deposition process. For low temperature growth of silicon nanowires the presence of pulsed silane plasma improves the density and sample coverage of silicon nanowires.

    Publication Type: Conference Paper
    Publisher: IEEE
    Copyright: © 2006 IEEE
    Notes: Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Appear in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, pp 35-38
    URI: http://researchrepository.murdoch.edu.au/id/eprint/6111
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