Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure
Hong, S.B., Kim, E., Shin, W., Bae, B.S., Jiang, Z-T, No, K., Lim, S.C., Woo, S.G. and Koh, Y.B. (1996) Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure. In: Photomask and X-Ray Mask Technology III, 18 - 19 April, Kawasaki City, Japan.
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A simple method of optical constant evaluation is employed to measure refractive index (n) and absorption coefficient (k) of chromium oxide thin films deposited on transparent substrate in deep ultraviolet range. The validity of the method is verified by comparison with n. k values calculated from transmittance and phase shift measurement. The calculated n, k values of chromium oxide film were 3.3 and 0.64 at 193 nrn, respectively. It was found that there existed optimum film thickness in the range of 45-55 nm for DUV attenuated phase shift at 193 nm. Moreover the film quality has been improved to yield smooth and uniform film surface.
|Publication Type:||Conference Paper|
|Publisher:||Society of Photo-optical Instrumentation Engineers|
|Copyright:||Society of Photo-optical Instrumentation Engineers|
|Notes:||Citation: Seungbum Hong, Eunah Kim, Zhong-Tao Jiang, Byeong-Soo Bae, Kwangsoo No, Woosuck Shin, Sung-Chul Lim, Sang-Gyun Woo and Young-Bum Koh, "Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure", Proc. SPIE 2793, 134 (1996); doi:10.1117/12.245204|
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