Possibility of simultaneous monitoring of temperature and surface layer thickness of Si substrate by in situ spectroscopic ellipsometry

Jiang, Z-T, Yamaguchi, T., Aoyama, M. and Hayashi, T. (1998) Possibility of simultaneous monitoring of temperature and surface layer thickness of Si substrate by in situ spectroscopic ellipsometry. Japanese Journal of Applied Physics, 37 (Part 1). pp. 479-483.

Abstract

The possibility of simultaneous monitoring of the temperature and the thickness of the surface layer of a crystalline silicon (c-Si) substrate by in situ spectroscopic ellipsometry (SE) is demonstrated using a surface adsorption layer (SAL) as an example. The model dielectric function (MDF) developed by Adachi and the tabular data of the dielectric function of fused silica were applied to a Si wafer and SAL, respectively. The best-fit curve has been obtained by fitting the measured \varPsi and Δ spectra simultaneously by adjusting the 12 MDF parameters and the thickness of SAL over the temperature range of 293–803 K. The best-fit MDF parameters indicate that the SAL thickness has almost no influence on the best-fit values of the MDF parameters. This fact can be used to monitor the temperature of a c-Si wafer independent of the thickness of surface layer by checking the shift of MDF parameters (e.g., E2) using the SE and the MDF. The measurement errors in thickness and temperature are roughly estimated to be 0.1 nm and less than 10 K, respectively.