Catalog Home Page

Effects of gas ring position and mesh introduction on film quality and thickness uniformity

Hong, S., Kim, E., Jiang, Z-T, Bae, B-S, No, K., Lim, S., Woo, S-G and Koh, Y-B (1997) Effects of gas ring position and mesh introduction on film quality and thickness uniformity. Materials Science and Engineering B, 45 (1-3). pp. 98-101.

Link to Published Version: http://dx.doi.org/10.1016/S0921-5107(96)01913-7
*Subscription may be required

Abstract

Chromium oxide films were deposited using DC reactive magnetron sputtering system with different gasring positions. It was found that the film quality was improved, while film thickness deviation over 2′' area of silica wafer increased, as the distance between the target and the gasring increased. To improve both the film quality and the thickness uniformity, a method of mesh insertion was tried and verified to meet the purpose. Introduction of mesh produced stable plasma and resulted in more uniform and smooth planar film without any contamination from the mesh. These phenomena were explained in terms of gettering and scattering effects of the mesh.

Publication Type: Journal Article
Publisher: Elsevier
Copyright: 1997 Elsevier Science S.A.
URI: http://researchrepository.murdoch.edu.au/id/eprint/5209
Item Control Page