Spectroscopic ellipsometry of TaNx and VN films
Mistrik, J., Takahashi, K., Antos, R., Aoyama, M., Yamaguchi, T., Anma, Y., Fukuda, Y., Takeyama, M.B., Jiang, Z-T, Thurgate, S. and Riessen, G.V. (2004) Spectroscopic ellipsometry of TaNx and VN films. Thin Solid Films, 455-56 . pp. 473-477.
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We report on spectro-ellipsometric investigations of reactively sputtered tantalum nitride (TaNx/SiO2) and vanadium nitride (VN/Si) films. Several TaNx layers with different deposition temperatures (200–400 °C) and a VN layer were prepared optically thick and analyzed using the bulk formula. For thin TaNx layers prepared with the same temperatures as thick layers, the Drude–Lorentz parameterization of dielectric functions was used by simultaneous fitting of ellipsometric and optical transmittance spectra. VN pseudo-dielectric functions show strong metallic character, which is typical for other transition metal nitrides. In contrast, the TaNx dielectric constants obtained here range from a metallic to a non-metallic character depending on substrate temperature, but independent of the film thickness. This substrate temperature dependence may be due to multiple phases in the TaNx films.
|Publication Type:||Journal Article|
|Murdoch Affiliation:||School of Engineering and Energy|
|Copyright:||2003 Elsevier B.V.|
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