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Spectroellipsometric characterization of thin silicon nitride films

Jiang, Z-T, Yamaguchi, T., Aoyama, M., Nakanishi, Y. and Asinovsky, L. (1998) Spectroellipsometric characterization of thin silicon nitride films. Thin Solid Films, 313-14 (1-2). pp. 298-302.

Link to Published Version: http://dx.doi.org/10.1016/S0040-6090(97)00836-5
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Abstract

An empirical dielectric function (EDF) has been used to represent the spectra in the effective optical constants of Si-rich nitride (SiNx) thin films processed by PECVD. A good correlation was found between the EDF parameters and the film composition results from Auger spectroscopy. It is shown that the EDF approach allows one to use a simple optical model of the film stack and extrapolate the spectra in the optical constants of SiNx outside the measured wavelength range. This advantage gives a feasibility of using the EDF to characterize optical properties of thin films in the Deep-UV region, below 230 nm, which is outside the spectral range of most commercial ellipsometers.

Publication Type: Journal Article
Publisher: Elsevier BV
Copyright: 1998 Elsevier Science S.A.
URI: http://researchrepository.murdoch.edu.au/id/eprint/5196
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