Dependence of the properties of (SrxTi1−x)O3 thin films deposited by plasma-enhanced metal–organic chemical vapor deposition on electron cyclotron resonance plasma
Lee, J.S., Song, H.W., Jun, B-H, Kwack, D.H., Yu, B.G., Jiang, Z-T and No, K. (1997) Dependence of the properties of (SrxTi1−x)O3 thin films deposited by plasma-enhanced metal–organic chemical vapor deposition on electron cyclotron resonance plasma. Thin Solid Films, 301 (1-2). pp. 154-161.
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(SrxTi1−x)O3 (0.26≤x≤0.55) thin films were prepared on p-type Si (100) and Pt/SiO2/Si substrates. A stoichiometric perovskite SrTiO3 film with good thickness and composition uniformity was obtained on 4 inch wafer (±7% temperature uniformity) using electron cyclotron resonance (ECR) plasma which compensated for the substrate temperature difference. It was found that the activity of the precursors can be controlled by changing the ECR plasma power and O2-to-(Ar+O2) flow rate ratio. The deposition rate and the Sr-to-Ti composition ratio of the films were increased with the ECR plasma power and the O2-to-(Ar+O2) flow rate ratio of the ECR plasma, because the activation and decomposition of the source of strontium vapor are more easily affected by the ECR oxygen plasma power than those of the source of titanium vapor. The crystallinity and the orientation of the film were controlled by its Sr-to-Ti composition ratio and oxygen activity or oxygen partial pressure. The films showed a uniform and fine grain structure, and a Sr-to-Ti composition dependence.
|Publication Type:||Journal Article|
|Copyright:||1997 Elsevier Science S.A.|
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