A Study of the Effects of Annealing and Outgassing on Hydrogenated Amorphous Silicon
Jennings, P.J., Cornish, J.C.L., Clare, B.W., Hefter, G. and Santjojo, D.J. (1997) A Study of the Effects of Annealing and Outgassing on Hydrogenated Amorphous Silicon. Thin Solid Films, 310 (1-2). pp. 156-160.
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Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH3 groups to SiH2 and SiH; conversion of SiH2 groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.
|Publication Type:||Journal Article|
|Murdoch Affiliation:||School of Chemical and Mathematical Science|
|Copyright:||Copyright © 1997 Published by Elsevier B.V.|
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